Optimizing power in a memory device

ABSTRACT

Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.15/248,364, filed Aug. 26, 2016, which is a continuation of U.S.application Ser. No. 14/405,910, filed Dec. 5, 2014, now U.S. Pat. No.9,431,089, which is US National Stage 371 Application of PCT ApplicationNo. PCT/US2013/044934, filed Jun. 10, 2013, which claims priority fromU.S. Provisional Application No. 61/658,709 filed Jun. 12, 2012, all ofwhich are hereby incorporated by reference as is set forth in full inthis application for all purposes.

BACKGROUND

Computer systems such as servers typically employ many dynamic randomaccess memory (DRAM) chips in order to have adequate memory capacity.Each of these DRAM chips has a delay-locked loop (DLL) that synchronizesthe data output of the DRAM with an external clock at a clock input ofthe DRAM chip. Because only a few DRAM chips are accessed at any giventime, a large number of DRAM chips are in idle mode. While unused DRAMchips can potentially turn off their DLLs to save power, their turn-ontime would be significantly high due to the need for re-locking theirDLLs. To avoid such latency, idling DRAMs usually keep their DLLs on.

BRIEF DESCRIPTION OF THE DRAWINGS

The various embodiments disclosed herein are illustrated by way ofexample and not by way of limitation in the figures of the accompanyingdrawings, in which like reference numerals refer to similar elements.

FIG. 1 illustrates a block diagram of an example environment, which maybe used to implement the embodiments described herein.

FIG. 2 illustrates a schematic diagram of an example memory device,according to one embodiment.

FIG. 3 illustrates an example simplified flow diagram for optimizingpower in a memory device, according to one embodiment.

FIG. 4 shows a timing diagram of signals associated with the operationof a memory device, according to one embodiment.

FIG. 5 illustrates an example simplified block diagram of latencycounters, according to one embodiment.

FIG. 6 illustrates an example simplified block diagram of a memorydevice having a dynamic on-die-termination (ODT) latency counter,according to one embodiment.

DETAILED DESCRIPTION

Embodiments described herein provide a memory device that includes acircuit that receives an internal clock signal and selects which pulsesof the internal clock signal are applied to an input of a delay-lockedloop circuit (DLL). The circuit selects clock pulses such that a subsetof the clock pulses is applied to the input of the DLL during apredetermined interval. As described in more detail below, thisoptimizes operations of the DLL during an idle mode.

In various embodiments disclosed herein, a memory device includes aclock gating circuit, referred to as a command and address clock (CAclk)pulse swallower. The CAclk is used to sample the incoming data (DQ)eventually after DQS sampling, the command and address signals, and theCAclk is the input to the DLL. As described in more detail below, theCAclk pulse swallower modifies the operation of the DLL by performing aclock division of the CAclk to apply a reduced activity clock rCAclk tothe input of the DLL when the memory device goes into an idle mode. Inone embodiment, a reduced activity clock is a clock signal which isgated such that some of its transitions are masked. As a result, the DLLoperates at a reduced activity clock, which reduces power consumptionduring the idle mode.

FIG. 1 illustrates a block diagram of an example environment 100, whichmay be used to implement the embodiments described herein. As shown, aprocessor 102 is coupled to a memory controller 104, which is coupled toa memory device 106. Memory device 106 includes a command decoder 108, amemory array 110, latency counters 112, a DLL 114, and a CAclk pulseswallower 116.

In some embodiments, environment 100 may not have all of the elementslisted and/or may have other elements instead of, or in addition to,those listed above. For example, FIG. 2 shows a more detailedembodiment, which may also be used to implement embodiments describedherein.

Memory controller 104 is an integrated circuit device that manages theflow of data signals DQ going to and from memory device 106. Memorycontroller 104 may be a chip with other integrated circuitry,microprocessor or application specific cores. In embodiments, memorycontroller 104 generates (e.g., using control logic) and outputs memorycommands (Cmd), control signals, and a clock signal for memory device106. Example signals may include an on-die-termination signal (ODTsignal), a read command (READ), a write command (WRT), and an externalclock signal, also referred to as clock CK. The control signals aresynchronized to clock CK.

The ODT signal enables or changes terminations at the DQ pins of theDRAM in order to dampen reflections in the data lines.

DLL 114 synchronizes clock CK coming in to memory device 106 with thetiming reference signal DQS (strobe signal) and data DQ beingtransmitted by memory device 106. DLL 114 ensures that the latencybetween clock CK and strobe signal is an integral number of cycles sothat clock CK and the strobe signal are nominally edge aligned. Itensures that this latency remains constant throughout the operation ofthe memory device.

As described in more detail below in connection with FIGS. 2 and 3,CAclk pulse swallower 116 modifies the operation of DLL 114 in order toreduce power consumption when memory device 106 is in idle mode (e.g.,stops receiving commands or control signals). In one or moreembodiments, DLL 114 remains on even when memory device 106 is in idlemode. This enables DLL 114 to be available instantly and operate asneeded as memory device 106 goes into active mode.

FIG. 2 illustrates a schematic diagram of an example memory device 200,according to an embodiment. As shown, memory device 200 includes aninput buffer 202 that functions as a clock receiver circuit. Inputbuffer 202 receives an external clock signal, referred to as clock CKand amplifies it to generate an internal clock signal, referred to asclock CAclk. Input buffer 204 circuits may receive commands (e.g., READcommand and WRT command) and/or control signals (e.g., ODT signal) froma memory controller, such as memory controller 104 of FIG. 1. An inputregister 206 receives the commands from input buffer 204, where thecommands are registered synchronous with respect to CAclk. A commanddecoder (Cmd Dec) 208 receives the commands from input register (IR) 206and then decodes them.

If a received command is a READ command, command decoder 208 sends anappropriate signal(s) to the memory array 210. It is shown as the columnaddress strobe (CAS). Command decoder 208 also sends a trigger signal(Cmd ca) to the read latency counter 212. A DLL 214 also sends a clockCdll to latency counters 212. In various embodiments, latency counters212 may include a CAclk counter and Cdll counter (not shown). ExampleCAclk and Cdll counters are described in more detail below in connectionwith FIG. 5.

After a certain amount of time, the read data (RDATA) is sent to afirst-in, first-out circuit (FIFO) 216. The amount of time required formemory access may vary, because the data delay from the core isasynchronous with respect to the Cdll, where the data delay is thecolumn access time (tCAA). tCAA is the time from when the CAS signal isissued to memory array 210 to the time the data is valid at the input ofFIFO 216. The data is ultimately sent from FIFO 216 to an output buffer(TX) 218, where the data is synchronized with clock Cdll provided by DLL214. In one embodiment, clocks CAclk and Cdll do not have a phaserelationship between each other.

In various embodiments, DLL 214 nominally aligns the phase of dataoutput DQ and the output strobe signal at the output pins of memorydevice 200 to external clock CK at the input of memory device 200. Invarious embodiments, the entire delay from CK to DQS (tDQSCK) spansmultiple CK clock cycles.

As described in more detail below, DLL 214 remains on during idle mode,and DLL 214 uses replica delays in order to ensure that DLL 214 canmaintain the integral number of clock cycles between CK and DQS pins. Asshown in FIG. 2, DLL 214 includes a delay line 222, buffers 224,t_in+t_out replica delay path 226, gates 228 and 230, and phase detector(PD) 232. Buffers 224 couple to output buffer (TX) 234. In oneembodiment, clock CAclk triggers input communication (e.g., triggerscommands entering input register 206), and clock Cdll triggers outputcommunication (e.g., triggers data leaving FIFO 216). In one embodiment,clock CAclk and clock Cdll are separated by the delay line (t dl) 222plus clock distribution buffers (t_buff) 224. In one embodiment, gates228 and 230 are AND gates.

In various embodiments, memory device 200 enters an idle mode whenmemory device 200 stops receiving commands (e.g., READ command and WRTcommand) or control signals (e.g., ODT signal) or as instructed by thecontroller. Generally, DLL 214 of memory device 200 consumes asignificant amount of power when running at the same full frequency asclock CK.

To reduce power consumption in the idle mode, a clock gating circuitreferred to as command address clock (CAclk) pulse swallower 220 reducesthe activity of edges entering the DLL by applying a low-activity clockat the input of DLL 214 via gate 236. In one embodiment gate 236 is anAND gate, but may be any suitable gating circuit. In one embodiment,CAclk pulse swallower includes a finite state machine (FSM) thateffectively and conditionally shapes clock CAclk into a low-activityclock to be applied to the input of DLL via gate 236. While embodimentsare described in the context of CAclk pulse swallower, other types ofclock dividers may be used. One embodiment of such a clock division isdescribed in more detail below.

The low-activity clock pulses stream applied at the input of DLL 214 isreferred to as reduced CAclk clock rCAclk. Applying rCAclk reducesactivity in DLL 214 and thus reduces the amount of power consumption byDLL 214. As described in more detail below, when DLL 214 operates at thereduced activity of clock rCAclk while memory device is in idle mode,the frequency of clock rCAclk is sufficient for 214 to properly trackvoltage and temperature changes in memory device 200.

If the rCAclk frequency is not the same as CK, the next highestfrequency may be given by F/N, where F is the frequency of clock CK andN is tDQSCK measured in clock cycles of clock CK, and where tDQSCK isthe time delay between clock CK and strobe signal. For example, in oneembodiment, tDQSCK=t in+t dl+t buff+t out=4 tCK (here N=4). If thegenerated rCAclk is 50% duty cycle, then the DLL can compare thepositive edge with the negative edge and the frequency of clock rCAclkcan be reduced to F/(2N). This reduces the idle clock distribution powerby a factor of 2N while allowing DLL 214 to instantly resume operationat the higher frequency of clock CK. This is possible because DLL 214 isalways tracking the voltage and temperature changes of memory device 200while in idle mode. Embodiments for providing a reduced clock rCAclk toDLL 214 are described in more detail below in connection of FIG. 3.

In some embodiments, environment 200 may not have all of the elementslisted and/or may have other elements instead of, or in addition to,those listed above. For example, FIG. 2 shows a more detailedembodiment, which may also be used to implement embodiments describedherein.

FIG. 3 illustrates an example simplified flow diagram for optimizingpower in a memory device, according to one embodiment. Referring to bothFIGS. 2 and 3, a process for optimizing power is initiated in block 302,where clock receiver circuit or input buffer 204 of memory device 200receives external clock CK to provide an internal clock signal. A gatesuch as gate 236 of memory device 200 then receives the internal clockCAclk from input buffer 204. In block 304, CAclk pulse swallower 220 ofmemory device 200 selects which pulses of internal clock CAclk areapplied to the input of DLL 214. In block 306, CAclk pulse swallower 220applies no more than two clock pulses selected from at least threeconsecutive pulses of the external clock signal to the input of DLL 214during a predetermined interval. In various embodiments described below,CAclk pulse swallower 220 shapes clock CAclk to produce clock rCAclk.

In one or more embodiments, CAclk pulse swallower 220 provides the twoclock pulses to DLL 214 by gating internal clock CAclk when memorydevice 200 is in an idle mode. In various embodiments, memory device 200is in an idle state when instructed by the controller or if the memorydevice 200 stops receiving command signals after a predetermined timeperiod (e.g., after one clock cycle). Once CAclk pulse swallower 220detects the idle mode, CAclk pulse swallower 220 generates the clockpulses of reduced clock rCAclk.

Input clock CAclk may be described in terms of pulses or edges. In oneembodiment, CAclk pulse swallower 220 may shape input clock CAclk toprovide a pair of edges to inputs of phase detector 232 after a firstedge of the pair of edges propagates through delay line 222 of DLL 214.In various embodiments, the pair of edges may be leading edges ortrailing edges, as long as the pair of edges is the same (e.g., bothleading edges or both trailing edges).

In one embodiment, when CAclk pulse swallower 220 releases the firstedge of the pair of edges, the first edge enters both delay line 222 anda gate 228. When CAclk pulse swallower 220 releases the first edge,CAclk pulse swallower 220 also disables phase detector 232 (by togglingpd_en). In one embodiment, CAclk pulse swallower 220 disables phasedetector 232 by disabling gates 228 and 230, which prevents the firstedge from entering phase detector 232. As described below, phasedetector 232 triggers after receiving the second edge.

The first edge travels through delay line 222, buffers 224, andt_in+t_out replica delay path 226 before entering gate 230. After thefirst edge comes around and enters AND gate 230, CAclk pulse swallower220 releases the second edge and also enables phase detector 232 (bytoggling pd_en), which enables the first edge to enter phase detector232.

The second edge travels through delay line 222, buffers 224, and t in+tout replica delay path 226 before entering gate 230. Still enabled phasedetector 232 receives the second edge, determines the timing differencebetween the first and second edges, and provides an update.

CAclk pulse swallower 220 then disables phase detector 232 again (bytoggling pd_en). This prevents new edges from entering phase detector232 until CAclk pulse swallower 220 again enables phase detector 232.This process starts over when CAclk pulse swallower 220 releases anotherfirst edge of a pair of edges. By this gating of clock CA, CAclk pulseswallower 220 effectively swallows pulses, which provides reduced clockrCAclk.

As described above, CAclk pulse swallower 220 selects which pulses ofclock CK (or clock CA) to apply to the input of DLL 214, CAclk pulseswallower 220 then divides clock CAclk to provide reduced clock rCAclksuch that the two edge in a pair of edges going to the phase detectorare away from each other by the tCKDQS time interval, and each pair ofedges is away from each other by more than tCKDQS delay.

In one embodiment, when CAclk pulse swallower 220 selects and releasespairs of edges, CAclk pulse swallower 220 may propagate both edges (orpulses) through DLL 214 as described in the example embodiments above.In another embodiment, CAclk pulse swallower 220 may propagate one edge(or pulse) but not the second edge (or pulse) through DLL 214. Insteadof sending the second edge through DLL 214, CAclk pulse swallower 220may simply send the second edge to phase detector 232 for comparisonwith the first edge. In other words, the second edge may or may notpropagate through DLL 214, depending on the specific implementedembodiment.

In one embodiment, in order to send the second edge to phase detector232 and bypass delay line 222, buffers 224, and t_in+t_out replica delaypath 226 of DLL 214, CAclk pulse swallower 220 may send the first andsecond edges through a multiplexor (MUX), where one MUX output sends thefirst edge through delay line 222, buffers 224, and t₁₃ in+t_out replicadelay path 226 of DLL 214, and where the other MUX output sends thesecond edge to phase detector 232. In one embodiment, the MUX mayreplace gate 236. In another embodiment, the MUX may be added to gate230 (e.g., following gate 236 in series, etc.).

In one embodiment, CAclk pulse swallower 220 starts gating clock CAclkand stops gating clock CAclk based on input commands (cmd ca). Forexample, in one embodiment, when the memory device enters idle mode,CAclk pulse swallower 220 is activated immediately. When memory device200 receives an input command or signal (e.g., ODT signal, READ command,or WRT command) and goes into an active mode, within one cycle from thecommand being decoded by command decoder, CAclk pulse swallower 200stops gating clock CAclk and applies the full-frequency clock CAclk tothe input of DLL 214. This immediately activates DLL 214. During thesecycles between active and idle mode of memory 200, latency counters 212are unaware of the modification of the behavior of DLL 214, whichenables latency counters 212 to operate as normal.

FIG. 4 shows a timing diagram of signals associated with the operationof a memory device 200, according to one embodiment. FIG. 4 shows clockCAclk, and two versions of reduced clock rCAclk during the idle mode. Asshown, in one embodiment, CAclk pulse swallower 220 gates clock CAclk toseparate repeating pairs of edges by a predetermined time period that isgreater than a delay line of DLL 214. As described above, CAclk pulseswallower 220 then applies resulting clock rCAclk to the input of DLL214 during idle mode.

In one embodiment, the transition into and out of the reduced clock modemay be triggered by signals that indicate the change of the memorydevice mode (e.g., Cmd signals).

In one embodiment, the division ratio N is determined during initialcalibration of memory device 200. N is the distance between clock CK andstrobe signal. In one embodiment, CAclk pulse swallower 220 sends pulsesthat are separated by N. In one embodiment, after DLL 214 reaches alocked state, the DLL control code is frozen and CAclk pulse swallower220 produces clock pulses pairs with a large time gap, or period Tg. Asshown, period Tg is the gap between two sets of pairs, and period Tg maybe programmed. In one embodiment, the period Tg is set according to DLLrequirements for tracking voltage and temperature variations of memorydevice 200 that is expected. In various embodiments, the power savingsis proportional to the period Tg. For example, a larger gap Tg resultsin a larger power savings.

In one embodiment, to determine N after the initial calibration, eachtime an edge (e.g., the positive edge) of a released pulse enters DLL214, the edge also starts a counter inside CAclk pulse swallower 220,and the counter counts the clock pulses. The edge travels through DLL214 and returns through t in+t out replica delay path 226. Uponreturning, the edge stops the counter, and that count equals N, which isthe measure of tDQSCK in the number of clock cycles of clock CK.

The voltage and temperature variation occurs at a slow rate, and DLL 214thus requires updates less often. In one embodiment, CAclk pulseswallower 220 uses this property to periodically send a group of rCAclkpulses. In some implementations, the period Tg may be as long as lOusand is specified during the initial calibration. The counter in CAclkpulse swallower 220 counts the number of clock periods before sending aset of rCAclk pulses.

In one embodiment, each pair of edges provides an update to DLL 214 inthat phase detector 232 determines from the time difference between theedges of a pair whether to maintain, increase, or decrease the delay.CAclk pulse swallower 220 may send pairs of edges at any predeterminedtime to provide another update, and the frequency of updates will dependon the particular implementation. As indicated above, N is the CK-to-DQSlatency number of clock cycles, which is known from initial calibrationof memory device 220. DLL 214 gets updated sufficiently so as toproperly track the voltage and temperature changes with more fidelity.

In one embodiment, CAclk pulse swallower 220 includes a programmabletimer, where the programmable timer generates a clock output signal thathas a predetermined frequency sufficient to enable DLL 214 to trackvoltage and temperature changes with a predetermined degree of accuracy.

In various embodiments, DLL 214 remains on even while memory device 200is in idle mode so that DLL 214 continually maintains phase relationshipbetween clock CK and strobe signal. DLL 214 remains on also in order toperform other operations such as voltage and temperature tracking, evenwhen memory device is in idle mode and DLL 214 is not needed for memoryoperations. When memory device 200 is in idle mode, DLL continuestracking clock CK to compensate for voltage and temperature changes.However, clock rCAclk need not operate at the same full frequency ofclock CK.

For example, in one example, assuming memory device 200 is operating ata low frequency (e.g., 400 MHz), in order to achieve an adequate powersavings such as a 10×power savings), idle mode updates should be atleast greater than 20 MHz in order adequately track changes in voltageand temperature. In normal operations, changes in voltage andtemperature are slow enough such that idle mode updates of at least 20MHz, are sufficient for tracking. The actual reduced clock rate isprogrammable and will depend on the specific implementation.

FIG. 5 illustrates an example simplified block diagram of latencycounters 500, according to one embodiment. For ease of illustration, ODTlatency counters are described in the example embodiments. In otherembodiments, READ latency counters may have the same or similararchitecture as the ODT counters shown in FIG. 5.

The periodic gating and ungating of clock CAclk does not disrupt therelationship between ODT CAclk counter 502 and ODT Cdll counter 504. Theoutput of CAclk pulse swallower 220 (reduced clock rCAclk) clocks ODTCAclk counter 502. No readjustment of ODT CAclk counter 502 and ODT Cdllcounter 504 is required after the initial calibration.

Clock Cdll clocks register 510, which sends data to the output buffer218 (shown in FIG. 2).

In various scenarios, ODT CAclk counter 502 and ODT Cdll counter 504 maygo out of sync while the memory device enters an idle state. Forexample, ODT Cdll counter 504 gets extra trailing edges after ODT CAclkcounter 502 stops. ODT CAclk counter 502 and ODT Cdll counter 504 getback into sync when memory device 200 exits the idle mode. For example,ODT CAclk counter 502 starts counting before ODT Cdll counter 504receives edges of clock Cdll. In other words, if CAclk pulse swallower220 gates Cdll, CAclk pulse swallower 220 also gates clock CAclk.Accordingly, rCAclk and Cdll stay in sync. Latency counters assumeconstant CAclk and Cdll.

In various embodiments, connecting the reduced clock rCAclk directly tothe latency counter 212 (specifically, to ODT CAclk counter 502) avoidsdisruption of the ODT CAclk counter 502 and ODT Cdll counter 504.

FIG. 6 illustrates an example simplified block diagram of a memorydevice having a dynamic ODT latency counter 600, according to oneembodiment. FIG. 6 shows an input buffer 602 that receives a commandsignal (Cmd), a flip-flop register (FF) 604 that receives the commandsignal, and a command decoder 606 that decodes the command signal. Aninput buffer 608 receives an ODT signal, FF 610 receives the ODT signal,and command decoder 606 decodes the ODT signal. FIG. 6 also shows an ODTlatency counter 612 and a DLL 614. An input buffer 616 receives anexternal clock CK, which is fed to FFs 604 and 610, and to a gate 618.In one embodiment, gate 618 is an AND gate. A CAclk pulse swallower 620gates internal clock CAclk to provide a reduced clock rCAclk to DLL 614.FIG. 6 also shows a merged ODT/OCD driver.

As described in more detail below, embodiments described herein supportdynamic ODT. In one embodiment, the ODT at the DQ pins may bedynamically changed at a number of clock cycles after the ODT pin isasserted. In one embodiment, an appropriate assertion of the output (ODTON, ODT OFF, WRT ODT ON, etc.) of a command decoder triggers the end ofthe CAclk pulse swallowing, which enables the full-rate frequency of theinternal clock CAclk to go through DLL 614.

In various embodiments, it is assumed that command decoder 606 completesan appropriate assertion of the output within one clock cycle so thatCAclk pulse swallower 620 can release clock CAclk starting at the nextcycle. While ODT Cdll counter 504 (FIG. 5) does not resume countinguntil a delay of DLL+buffer, after clock CAclk reaches ODT CAclk counter502 (FIG. 5), ODT Cdll counter 504 also continues to count for a periodof DLL+buffer longer than ODT CAclk counter 502 when memory device 800enters the idle mode. Accordingly, the relationship between ODT CAclkcounter 502 and ODT Cdll counter 504 is continually restored as memorydevice 200 cycles between idle mode to active mode. In addition, duringidle mode, both of the counters ODT CAclk counter 502 and ODT Cdllcounter 504 continue counting at slower rate, and they maintain theiroffset intact. In other words, whether memory device is in idle mode oractive mode. ODT CAclk counter 502 and ODT Cdll counter 504 count thesame number edges.

If the latency that the counters need to count should be larger than theamount by which the counters go out of sync, the counter relationshipwill be restored before the count value of ODT Cdll counter 504 needs tobe compared with the count value captured from ODT CAclk counter 502.

Embodiments described herein also apply to the read latency counters.For example, in one embodiment, the read latency counters are alsoclocked with rCAclk. Because the read latency is typically much longerthan the ODT latency, the read path is not a cause for concern.

Embodiments described herein provide various benefits. For example,embodiments accommodate other functions of a memory device 106. Forexample, the memory device may continue keeping track of READ latency,ODT timing, etc. during idle mode. Embodiments are also minimallyinvasive to the existing architecture of a memory device. Embodimentsmay be applied to conventional DLLs and the DLLs are immediatelyavailable when needed.

Embodiments also provide optimization of power in a memory device in amanner that is seamless to a memory controller.

It should be noted that the various circuits disclosed herein may bedescribed using computer aided design tools and expressed (orrepresented), as data and/or instructions embodied in variouscomputer-readable media, in terms of their behavioral, registertransfer, logic component, transistor, layout geometries, and/or othercharacteristics. Formats of files and other objects in which suchcircuit expressions may be implemented include, but are not limited to,formats supporting behavioral languages such as C, Verilog, andvery-high-speed IC hardware description language (VHDL), formatssupporting register level description languages like register transferlanguage (RTL), and formats supporting geometry description languagessuch as graphic database system II stream format (GDSII), GDSIII, GDSIV,Caltech intermediate form (CIF), manufacturing electron-beam exposuresystem (MEBES) and any other suitable formats and languages.Computer-readable media in which such formatted data and/or instructionsmay be embodied include, but are not limited to, computer storage mediain various forms (e.g., optical, magnetic or semiconductor storagemedia, whether independently distributed in that manner, or stored “insitu” in an operating system).

When received within a computer system via one or more computer-readablemedia, such data and/or instruction-based expressions of the abovedescribed circuits may be processed by a processing entity (e.g., one ormore processors) within the computer system in conjunction withexecution of one or more other computer programs including, withoutlimitation, net-list generation programs, place and route programs andthe like, to generate a representation or image of a physicalmanifestation of such circuits. Such representation or image maythereafter be used in device fabrication, for example, by enablinggeneration of one or more masks that are used to form various componentsof the circuits in a device fabrication process.

In the foregoing description and in the accompanying drawings, specificterminology and drawing symbols have been set forth to provide athorough understanding of the disclosed embodiments. In some instances,the terminology and symbols may imply specific details that are notrequired to practice those embodiments. For example, any of the specificnumbers of bits, signal path widths, signaling or operating frequencies,component circuits or devices and the like may be different from thosedescribed above in alternative embodiments. Additionally, links or otherinterconnection between integrated circuit devices or internal circuitelements or blocks may be shown as buses or as single signal lines. Eachof the buses may alternatively be a single signal line, and each of thesingle signal lines may alternatively be buses. Signals and signalinglinks, however shown or described, may be single-ended or differential.A signal driving circuit is said to “output” a signal to a signalreceiving circuit when the signal driving circuit asserts (or deasserts,if explicitly stated or indicated by context) the signal on a signalline coupled between the signal driving and signal receiving circuits.An address or other value provided “in” or “with” a command may betransmitted concurrently (i.e., at least partly overlapping in time)with a group of bits containing a command code or identifier, orprepended, appended or otherwise transmitted in association with thecommand code or identifier. The term “coupled” is used herein to expressa direct connection as well as a connection through one or moreintervening circuits or structures. Integrated circuit device“programming” may include, for example and without limitation, loading acontrol value into a register or other storage circuit within theintegrated circuit device in response to a host instruction (and thuscontrolling an operational aspect of the device and/or establishing adevice configuration) or through a one-time programming operation (e.g.,blowing fuses within a configuration circuit during device production),and/or connecting one or more selected pins or other contact structuresof the device to reference voltage lines (also referred to as strapping)to establish a particular device configuration or operation aspect ofthe device. The terms “exemplary” and “embodiment” are used to expressan example, not a preference or requirement.

Various modifications and changes may be made to the embodimentspresented herein without departing from the broader spirit and scope ofthe disclosure. For example, features or aspects of any of theembodiments may be applied, at least where practicable, in combinationwith any other of the embodiments or in place of counterpart features oraspects thereof. Accordingly, the specification and drawings are to beregarded in an illustrative rather than a restrictive sense.

1. (canceled)
 2. A memory device comprising: a clock receiver circuit toreceive an external clock signal; a delay-locked loop (DLL) circuitcoupled to the clock receiver circuit; and a circuit to generate areduced clock signal from the external clock signal and provide thereduced clock signal to the DLL circuit during an idle mode of thememory device, wherein the reduced clock signal comprises a subset of anumber of pulses of the external clock signal within a given timeinterval of the external clock signal.
 3. The memory device of claim 2,wherein the circuit is configured to detect when the memory deviceenters the idle mode and to generate the reduced clock signal inresponse to detecting that the memory device enters the idle mode. 4.The memory device of claim 3, further comprising: an input buffercircuit to receive, using the external clock signal, memory commands andmode commands from a memory controller.
 5. The memory device of claim 4,wherein the circuit to detect that the memory device enters the idlemode in response to the input buffer circuit not having received acommand for a predetermined period of time.
 6. The memory device ofclaim 4, wherein the circuit to detect that the memory device enters theidle mode in response to the input buffer having received a commandindicating the idle mode.
 7. The memory device of claim 2, wherein thesubset comprises no more than two clock pulses selected from at leastthree consecutive pulses of the external clock signal.
 8. A method ofoperation in a memory device, the method comprising: receiving, by aclock receiver circuit, an external clock signal; generating, by acircuit, a reduced clock signal from the external clock signal during anidle mode of the memory device, wherein the reduced clock signalcomprises a subset of a number of pulses of the external clock signalwithin a given time interval of the external clock signal; andproviding, by the circuit, the reduced clock signal to a delay-lockedloop (DLL) circuit during the idle mode of the memory device.
 9. Themethod of claim 8, further comprising: detecting when the memory deviceenters the idle mode; and generating the reduced clock signal inresponse to detecting that the memory device enters the idle mode. 10.The method of claim 9, further comprising: receiving, by an input buffercircuit using the external clock signal, memory commands and modecommands from a memory controller.
 11. The method of claim 10, furthercomprising: detecting that the memory device enters the idle mode inresponse to the input buffer circuit not having received a command for apredetermined period of time.
 12. The method of claim 10, furthercomprising: detecting that the memory device enters the idle mode inresponse to the input buffer having received a command indicating theidle mode.
 13. The method of claim 8, wherein the subset comprises nomore than two clock pulses selected from at least three consecutivepulses of the external clock signal:
 14. A memory device comprising: aclock receiver circuit to receive an external clock signal; and acircuit to generate a reduced clock signal from the external clocksignal during an idle mode of the memory device, wherein the reducedclock signal comprises a subset of a number of pulses of the externalclock signal within a given time interval of the external clock signal.15. The memory device of claim 14, wherein the circuit is configured todetect when the memory device enters the idle mode and to generate thereduced clock signal in response to detecting that the memory deviceenters the idle mode.
 16. The memory device of claim 15, furthercomprising: an input buffer circuit to receive, using the external clocksignal, memory commands and mode commands from a memory controller. 17.The memory device of claim 16, wherein the circuit to detect that thememory device enters the idle mode in response to the input buffercircuit not having received a memory command for a predetermined periodof time.
 18. The memory device of claim 16, wherein the circuit todetect that the memory device enters the idle mode in response to theinput buffer having received a mode command indicating the idle mode.19. The memory device of claim 14, further comprising: a delay-lockedloop (DLL) circuit coupled to the clock receiver circuit.
 20. The memorydevice of claim 19, wherein the circuit to provide the reduced clocksignal to the DLL circuit during the idle mode of the memory device. 21.The memory device of claim 19, wherein the subset comprises no more thantwo clock pulses selected from at least three consecutive pulses of theexternal clock signal.